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?2001 silicon storage technology, inc. s71150-03-000 6/01 395 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. mpf is a trademark of silicon storage technology, inc. these specifications are subject to change without notice. data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit (x8) multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 features: ? organized as 64k x8 / 128k x8 / 256k x8 / 512k x8 single voltage read and write operations ? 3.0-3.6v for sst39lf512/010/020/040 ? 2.7-3.6v for sst39vf512/010/020/040 superior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention low power consumption: ? active current: 10 ma (typical) ? standby current: 1 a (typical) sector-erase capability ? uniform 4 kbyte sectors fast read access time: ? 45 ns for sst39lf512/010/020/040 ? 55 ns for sst39lf020/040 ? 70 and 90 ns for sst39vf512/010/020/040 latched address and data fast erase and byte-program: ? sector-erase time: 18 ms (typical) ? chip-erase time: 70 ms (typical) ? byte-program time: 14 ? (typical) ? chip rewrite time: 1 second (typical) for sst39lf/vf512 2 seconds (typical) for sst39lf/vf010 4 seconds (typical) for sst39lf/vf020 8 seconds (typical) for sst39lf/vf040 automatic write timing ? internal v pp generation end-of-write detection ? toggle bit ? data# polling cmos i/o compatibility jedec standard ? flash eeprom pinouts and command sets packages available ? 32-lead plcc ? 32-lead tsop (8mm x 14mm) ? 48-ball tfbga (6mm x 8mm) for 1 mbit product description the sst39lf512/010/020/040 and sst39vf512/010/ 020/040 are 64k x8, 128k x8, 256k x8 and 5124k x8 cmos multi-purpose flash (mpf) manufactured with sst ? s proprietary, high performance cmos superflash technology. the split-gate cell design and thick oxide tun- neling injector attain better reliability and manufacturability compared with alternate approaches. the sst39lf512/ 010/020/040 devices write (program or erase) with a 3.0- 3.6v power supply. the sst39vf512/010/020/040 devices write with a 2.7-3.6v power supply. the devices conform to jedec standard pinouts for x8 memories. featuring high performance byte-program, the sst39lf512/010/020/040 and sst39vf512/010/020/ 040 devices provide a maximum byte-program time of 20 ?ec. these devices use toggle bit or data# polling to indi- cate the completion of program operation. to protect against inadvertent write, they have on-chip hardware and software data protection schemes. designed, manufac- tured, and tested for a wide spectrum of applications, they are offered with a guaranteed endurance of 10,000 cycles. data retention is rated at greater than 100 years. the sst39lf512/010/020/040 and sst39vf512/010/ 020/040 devices are suited for applications that require convenient and economical updating of program, configu- ration, or data memory. for all system applications, they significantly improves performance and reliability, while low- ering power consumption. they inherently use less energy during erase and program than alternative flash technolo- gies. the total energy consumed is a function of the applied voltage, current, and time of application. since for any given voltage range, the superflash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program oper- ation is less than alternative flash technologies. these devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. the superflash technology provides fixed erase and pro- gram times, independent of the number of erase/program cycles that have occurred. therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated erase/pro- gram cycles. to meet surface mount requirements, the sst39lf512/ 010/020/040 and sst39vf512/010/020/040 devices are offered in 32-lead plcc and 32-lead tsop packages. the 39lf/vf010 is also offered in a 48-ball tfbga package. see figures 1 and 2 for pinouts. sst39lf/vf512 / 010 / 020 / 0403.0 & 2.7v 512kb / 1mb / 2mb / 4mb (x8) mpf memories
2 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 device operation commands are used to initiate the memory operation func- tions of the device. commands are written to the device using standard microprocessor write sequences. a com- mand is written by asserting we# low while keeping ce# low. the address bus is latched on the falling edge of we# or ce#, whichever occurs last. the data bus is latched on the rising edge of we# or ce#, whichever occurs first. read the read operation of the sst39lf512/010/020/040 and sst39vf512/010/020/040 device is controlled by ce# and oe#, both have to be low for the system to obtain data from the outputs. ce# is used for device selection. when ce# is high, the chip is deselected and only standby power is consumed. oe# is the output control and is used to gate data from the output pins. the data bus is in high imped- ance state when either ce# or oe# is high. refer to the read cycle timing diagram for further details (figure 4). byte-program operation the sst39lf512/010/020/040 and sst39vf512/010/ 020/040 are programmed on a byte-by-byte basis. before programming, one must ensure that the sector, in which the byte which is being programmed exists, is fully erased. the program operation consists of three steps. the first step is the three-byte-load sequence for software data protection. the second step is to load byte address and byte data. during the byte-program operation, the addresses are latched on the falling edge of either ce# or we#, whichever occurs last. the data is latched on the ris- ing edge of either ce# or we#, whichever occurs first. the third step is the internal program operation which is initi- ated after the rising edge of the fourth we# or ce#, which- ever occurs first. the program operation, once initiated, will be completed, within 20 ?. see figures 5 and 6 for we# and ce# controlled program operation timing diagrams and figure 15 for flowcharts. during the program opera- tion, the only valid reads are data# polling and toggle bit. during the internal program operation, the host is free to perform additional tasks. any commands written during the internal program operation will be ignored. sector-erase operation the sector-erase operation allows the system to erase the device on a sector-by-sector basis. the sector architecture is based on uniform sector size of 4 kbyte. the sector- erase operation is initiated by executing a six-byte-com- mand sequence with sector-erase command (30h) and sector address (sa) in the last bus cycle. the sector address is latched on the falling edge of the sixth we# pulse, while the command (30h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of-erase can be determined using either data# polling or toggle bit meth- ods. see figure 9 for timing waveforms. any commands written during the sector-erase operation will be ignored. chip-erase operation the sst39lf512/010/020/040 and sst39vf512/010/ 020/040 devices provide a chip-erase operation, which allows the user to erase the entire memory array to the ? 1s ? state. this is useful when the entire device must be quickly erased. the chip-erase operation is initiated by executing a six- byte software data protection command sequence with chip-erase command (10h) with address 5555h in the last byte sequence. the internal erase operation begins with the rising edge of the sixth we# or ce#, whichever occurs first. during the internal erase operation, the only valid read is toggle bit or data# polling. see table 4 for the command sequence, figure 10 for timing diagram, and figure 18 for the flowchart. any commands written during the chip- erase operation will be ignored. write operation status detection the sst39lf512/010/020/040 and sst39vf512/010/ 020/040 devices provide two software means to detect the completion of a write (program or erase) cycle, in order to optimize the system write cycle time. the software detec- tion includes two status bits: data# polling (dq 7 ) and tog- gle bit (dq 6 ). the end-of-write detection mode is enabled after the rising edge of we# which initiates the internal pro- gram or erase operation. the actual completion of the nonvolatile write is asynchro- nous with the system; therefore, either a data# polling or toggle bit read may be simultaneous with the completion of the write cycle. if this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to con- flict with either dq 7 or dq 6 . in order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. if both reads are valid, then the device has completed the write cycle, otherwise the rejec- tion is valid.
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 3 2001 silicon storage technology, inc. s71150-03-000 6/01 395 data# polling (dq 7 ) when the sst39lf512/010/020/040 and sst39vf512/ 010/020/040 are in the internal program operation, any attempt to read dq 7 will produce the complement of the true data. once the program operation is completed, dq 7 will produce true data. the device is then ready for the next operation. during internal erase operation, any attempt to read dq 7 will produce a ? 0 ? . once the internal erase opera- tion is completed, dq 7 will produce a ? 1 ? . the data# polling is valid after the rising edge of fourth we# (or ce#) pulse for program operation. for sector- or chip-erase, the data# polling is valid after the rising edge of sixth we# (or ce#) pulse. see figure 7 for data# polling timing diagram and figure 16 for a flowchart. toggle bit (dq 6 ) during the internal program or erase operation, any con- secutive attempts to read dq 6 will produce alternating 0s and 1s, i.e., toggling between 0 and 1. when the internal program or erase operation is completed, the toggling will stop. the device is then ready for the next operation. the toggle bit is valid after the rising edge of fourth we# (or ce#) pulse for program operation. for sector- or chip- erase, the toggle bit is valid after the rising edge of sixth we# (or ce#) pulse. see figure 8 for toggle bit timing dia- gram and figure 16 for a flowchart. data protection the sst39lf512/010/020/040 and sst39vf512/010/ 020/040 provide both hardware and software features to protect nonvolatile data from inadvertent writes. hardware data protection noise/glitch protection: a we# or ce# pulse of less than 5 ns will not initiate a write cycle. v dd power up/down detection: the write operation is inhibited when v dd is less than 1.5v. write inhibit mode: forcing oe# low, ce# high, or we# high will inhibit the write operation. this prevents inadvert- ent writes during power-up or power-down. software data protection (sdp) the sst39lf512/010/020/040 and sst39vf512/010/ 020/040 provide the jedec approved software data pro- tection scheme for all data alteration operation, i.e., pro- gram and erase. any program operation requires the inclusion of a series of three byte sequence. the three byte-load sequence is used to initiate the program opera- tion, providing optimal protection from inadvertent write operations, e.g., during the system power-up or power- down. any erase operation requires the inclusion of six byte load sequence. these devices are shipped with the software data protection permanently enabled. see table 4 for the specific software command codes. during sdp command sequence, invalid commands will abort the device to read mode, within t rc . product identification the product identification mode identifies the devices as the sst39lf/vf512, sst39lf/vf010, sst39lf/vf020 and sst39lf/vf040 and manufacturer as sst. this mode may be accessed by software operations. users may use the software product identification operation to identify the part (i.e., using the device id) when using multi- ple manufacturers in the same socket. for details, see table 4 for software operation, figure 11 for the software id entry and read timing diagram, and figure 17 for the software id entry command sequence flowchart. product identification mode exit/reset in order to return to the standard read mode, the software product identification mode must be exited. exit is accom- plished by issuing the software id exit command sequence, which returns the device to the read operation. please note that the software id exit command is ignored during an internal program or erase operation. see table 4 for software command codes, figure 12 for timing wave- form, and figure 17 for a flowchart. table 1: p roduct i dentification address data manufacturer ? s id 0000h bfh device id sst39lf/vf512 0001h d4h sst39lf/vf010 0001h d5h sst39lf/vf020 0001h d6h sst39lf/vf040 0001h d7h t1.1 395
4 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 1: p in a ssignments for 32- lead plcc y-decoder i/o buffers and data latches 395 ill b1.1 address buffers & latches x-decoder dq 7 - dq 0 memory address oe# ce# we# superflash memory control logic f unctional b lock d iagram 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 a7 a6 a5 a4 a3 a2 a1 a0 dq0 a7 a6 a5 a4 a3 a2 a1 a0 dq0 a7 a6 a5 a4 a3 a2 a1 a0 dq0 a7 a6 a5 a4 a3 a2 a1 a0 dq0 a14 a13 a8 a9 a11 oe# a10 ce# dq7 a14 a13 a8 a9 a11 oe# a10 ce# dq7 a14 a13 a8 a9 a11 oe# a10 ce# dq7 a14 a13 a8 a9 a11 oe# a10 ce# dq7 4 3 2 1 32 31 30 a12 a15 nc nc v dd we# nc a12 a15 a16 nc v dd we# nc a12 a15 a16 nc v dd we# a17 a12 a15 a16 a18 v dd we# a17 32-lead plcc top view 395 ill f02b.3 14 15 16 17 18 19 20 dq1 dq2 v ss dq3 dq4 dq5 dq6 dq1 dq2 v ss dq3 dq4 dq5 dq6 dq1 dq2 v ss dq3 dq4 dq5 dq6 dq1 dq2 v ss dq3 dq4 dq5 dq6 sst39lf/vf512 sst39lf/vf010 sst39lf/vf020 sst39lf/vf040 sst39lf/vf010 sst39lf/vf020 sst39lf/vf040 sst39lf/vf512 sst39lf/vf512 sst39lf/vf010 sst39lf/vf020 sst39lf/vf040 sst39lf/vf010 sst39lf/vf020 sst39lf/vf040 sst39lf/vf512
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 5 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 2: p in a ssignments for 32- lead tsop (8 mm x 14 mm ) figure 3: p in a ssignment for 48- ball tfbga (6 mm x 8 mm ) for 1 m bit a11 a9 a8 a13 a14 nc we# v dd nc nc a15 a12 a7 a6 a5 a4 a11 a9 a8 a13 a14 nc we# v dd nc a16 a15 a12 a7 a6 a5 a4 a11 a9 a8 a13 a14 a17 we# v dd nc a16 a15 a12 a7 a6 a5 a4 a11 a9 a8 a13 a14 a17 we# v dd a18 a16 a15 a12 a7 a6 a5 a4 sst39lf/vf512 sst39lf/vf010 sst39lf/vf020 sst39lf/vf040 sst39lf/vf010 sst39lf/vf020 sst39lf/vf040 sst39lf/vf512 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 oe# a10 ce# dq7 dq6 dq5 dq4 dq3 v ss dq2 dq1 dq0 a0 a1 a2 a3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 395 ill f01.0 standard pinout top view die up 395 ill f01a.0.eps a b c d e f g h sst39lf/vf010 6 5 4 3 2 1 top view (balls facing down) a14 a9 we# nc a7 a3 a13 a8 nc nc nc a4 a15 a11 nc nc a6 a2 a16 a12 nc nc a5 a1 nc nc dq5 dq2 dq0 a0 nc a10 nc dq3 nc ce# nc dq6 v dd v dd nc oe# v ss dq7 dq4 nc dq1 v ss
6 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 table 2: p in d escription symbol pin name functions a ms 1 -a 0 address inputs to provide memory addresses. during sector-erase a ms -a 12 address lines will select the sector. during block-erase a ms -a 16 address lines will select the block. dq 7 -dq 0 data input/output to output data during read cycles and receive input data during write cycles. data is internally latched during a write cycle. the outputs are in tri-state when oe# or ce# is high. ce# chip enable to activate the device when ce# is low. oe# output enable to gate the data output buffers. we# write enable to control the write operations. v dd power supply to provide power supply voltage: 3.0-3.6v for sst39lf512/010/020/040 2.7-3.6v for sst39vf512/010/020/040 v ss ground nc no connection unconnected pins. t2.1 395 1. a ms = most significant address a ms = a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020, and a 18 for sst39lf/vf040 table 3: o peration m odes s election mode ce# oe# we# dq address read v il v il v ih d out a in program v il v ih v il d in a in erase v il v ih v il x 1 1. x can be v il or v ih , but no other value. sector address, xxh for chip-erase standby v ih xxhigh z x write inhibit x v il xhigh z/ d out x xxv ih high z/ d out x product identification software mode v il v il v ih see table 4 t3.4 395
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 7 2001 silicon storage technology, inc. s71150-03-000 6/01 395 table 4: s oftware c ommand s equence command sequence 1st bus write cycle 2nd bus write cycle 3rd bus write cycle 4th bus write cycle 5th bus write cycle 6th bus write cycle addr 1 data addr 1 data addr 1 data addr 1 data addr 1 data addr 1 data byte-program 5555h aah 2aaah 55h 5555h a0h ba 2 data sector-erase 5555h aah 2aaah 55h 5555h 80h 5555h aah 2aaah 55h sa x 3 30h chip-erase 5555h aah 2aaah 55h 5555h 80h 5555h aah 2aaah 55h 5555h 10h software id entry 4,5 5555h aah 2aaah 55h 5555h 90h software id exit 6 xxh f0h software id exit 6 5555h aah 2aaah 55h 5555h f0h t4.2 395 1. address format a 14 -a 0 (hex), address a 15 can be v il or v ih , but no other value, for the command sequence for sst39lf/vf512. addresses a 15 -a 16 can be v il or v ih , but no other value, for the command sequence for sst39lf/vf010. addresses a 15 -a 17 can be v il or v ih , but no other value, for the command sequence for sst39lf/vf020. addresses a 15 -a 18 can be v il or v ih , but no other value, for the command sequence for sst39lf/vf040. 2. ba = program byte address 3. sa x for sector-erase; uses a ms -a 12 address lines a ms = most significant address a ms = a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020, and a 18 for sst39lf/vf040 4. the device does not remain in software product id mode if powered down. 5. with a ms -a 1 =0; sst manufacturer ? s id= bfh, is read with a 0 = 0, sst39lf/vf512 device id = d4h, is read with a 0 = 1 sst39lf/vf010 device id = d5h, is read with a 0 = 1 sst39lf/vf020 device id = d6h, is read with a 0 = 1 sst39lf/vf040 device id = d7h, is read with a 0 = 1 6. both software id exit operations are equivalent absolute maximum stress ratings (applied conditions greater than those listed under ? absolute maximum stress ratings ? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) temperature under bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 c to +125 c storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 c to +150 c d. c. voltage on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to v dd + 0.5v transient voltage (<20 ns) on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0v to v dd + 1.0v voltage on a 9 pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to 13.2v package power dissipation capability (ta = 25 c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0w output short circuit current 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 ma 1. outputs shorted for no more than one second. no more than one output shorted at a time. o perating r ange for sst39lf512/010/020/040 range ambient temp v dd commercial 0 c to +70 c 3.0-3.6v o perating r ange for sst39vf512/010/020/040 range ambient temp v dd commercial 0 c to +70 c 2.7-3.6v industrial -40 c to +85 c 2.7-3.6v ac c onditions of t est input rise/fall time . . . . . . . . . . . . . . . 5 ns output load c l = 30 pf for sst39lf512/010/020/040 c l = 100 pf for sst39vf512/010/020/040 see figures 13 and 14
8 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 table 5: dc o perating c haracteristics v dd = 3.0-3.6v for sst39lf512/010/020/040 and 2.7-3.6v for sst39vf512/010/020/040 symbol parameter limits test conditions min max units i dd power supply current address input=v il /v ih , at f=1/t rc min v dd =v dd max read 20 ma ce#=oe#=v il , we#=v ih , all i/os open write 20 ma ce#=we#=v il , oe#=v ih i sb standby v dd current 15 ? ce#=v ihc , v dd =v dd max i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 10 ? v out =gnd to v dd , v dd =v dd max v il input low voltage 0.8 v v dd =v dd min v ih input high voltage 0.7v dd vv dd =v dd max v ihc input high voltage (cmos) v dd -0.3 v v dd =v dd max v ol output low voltage 0.2 v i ol =100 ?, v dd =v dd min v oh output high voltage v dd -0.2 v i oh =-100 ?, v dd =v dd min t5.2 395 table 6: r ecommended s ystem p ower - up t imings symbol parameter minimum units t pu-read 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. power-up to read operation 100 ? t pu-write 1 power-up to program/erase operation 100 ? t6.1 395 table 7: c apacitance (ta = 25 c, f=1 mhz, other pins open) parameter description test condition maximum c i/o 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. i/o pin capacitance v i/o = 0v 12 pf c in 1 input capacitance v in = 0v 6 pf t7.0 395 table 8: r eliability c haracteristics symbol parameter minimum specification units test method n end 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. endurance 10,000 cycles jedec standard a117 t dr 1 data retention 100 years jedec standard a103 i lt h 1 latch up 100 + i dd ma jedec standard 78 t8.2 395
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 9 2001 silicon storage technology, inc. s71150-03-000 6/01 395 ac characteristics table 9: r ead c ycle t iming p arameters v dd = 3.0-3.6v for sst39lf512/010/020/040 and 2.7-3.6v for sst39vf512/010/020/040 symbol parameter sst39lf512-45 sst39lf010-45 sst39lf020-45 sst39lf040-45 sst39lf020-55 sst39lf040-55 sst39vf512-70 sst39vf010-70 sst39vf020-70 sst39vf040-70 sst39vf512-90 sst39vf010-90 sst39vf020-90 sst39vf040-90 units min max min max min max min max t rc read cycle time 45 55 70 90 ns t ce chip enable access time 45 55 70 90 ns t aa address access time 45 55 70 90 ns t oe output enable access time 30 30 35 45 ns t clz 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. ce# low to active output 0 0 0 0 ns t olz 1 oe# low to active output 0 0 0 0 ns t chz 1 ce# high to high-z output 15 15 25 30 ns t ohz 1 oe# high to high-z output 15 15 25 30 ns t oh 1 output hold from address change 0000ns t9.2 395 table 10: p rogram /e rase c ycle t iming p arameters symbol parameter min max units t bp byte-program time 20 s t as address setup time 0 ns t ah address hold time 30 ns t cs we# and ce# setup time 0 ns t ch we# and ce# hold time 0 ns t oes oe# high setup time 0 ns t oeh oe# high hold time 10 ns t cp ce# pulse width 40 ns t wp we# pulse width 40 ns t wph 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. we# pulse width high 30 ns t cph 1 ce# pulse width high 30 ns t ds data setup time 40 ns t dh 1 data hold time 0 ns t ida 1 software id access and exit time 150 ns t se sector-erase 25 ms t sce chip-erase 100 ms t10.1 395
10 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 4: r ead c ycle t iming d iagram figure 5: we# c ontrolled p rogram c ycle t iming d iagram 395 ill f03.0 address a ms-0 dq 7-0 we# oe# ce# t ce t rc t aa t oe t olz v ih high-z t clz t oh t chz high-z data valid data valid t ohz note: a ms = most significant address a ms =a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020 and a 18 for sst39lf/vf040 395 ill f04.0 address a ms-0 dq 7-0 t dh t wph t ds t wp t ah t as t ch t cs ce# sw0 sw1 sw2 5555 2aaa 5555 addr aa 55 a0 data internal program operation starts byte (addr/data) oe# we# t bp note: a ms = most significant address a ms =a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020 and a 18 for sst39lf/vf040
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 11 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 6: ce# c ontrolled p rogram c ycle t iming d iagram figure 7: d ata # p olling t iming d iagram 395 ill f05.0 address a ms-0 dq 7-0 t dh t cph t ds t cp t ah t as t ch t cs we# sw0 sw1 sw2 5555 2aaa 5555 addr aa 55 a0 data internal program operation starts byte (addr/data) oe# ce# t bp note: a ms = most significant address a ms =a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020 and a 18 for sst39lf/vf040 395 ill f06.0 address a ms-0 dq 7 dd# d# d we# oe# ce# t oeh t oe t ce t oes note: a ms = most significant address a ms =a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020 and a 18 for sst39lf/vf040
12 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 8: t oggle b it t iming d iagram figure 9: we# c ontrolled s ector -e rase t iming d iagram 395 ill f07.0 address a ms-0 dq 6 we# oe# ce# t oe t oeh t ce t oes two read cycles with same outputs note: a ms = most significant address a ms =a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020 and a 18 for sst39lf/vf040 334 ill f08.0 address a ms-0 dq 7-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 55 30 55 aa 80 aa sa x oe# ce# six-byte code for sector-erase t se t wp note: this device also supports ce# controlled sector-erase operation. the we# and ce# signals are interchageable as long as minmum timings are met. (see table 10) sa x = sector address a ms = most significant address a ms =a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020 and a 18 for sst39lf/vf040
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 13 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 10: we# c ontrolled c hip -e rase t iming d iagram figure 11: s oftware id e ntry and r ead 334 ill f17.0 address a ms-0 dq 7-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 55 10 55 aa 80 aa 5555 oe# ce# six-byte code for chip-erase t sce t wp note: this device also supports ce# controlled chip-erase operation. the we# and ce# signals are interchageable as long as minmum timings are met. (see table 10) a ms = most significant address a ms =a 15 for sst39lf/vf512, a 16 for sst39lf/vf010, a 17 for sst39lf/vf020 and a 18 for sst39lf/vf040 395 ill f09.2 note: device id = d4h for sst39lf/vf512, d5h for sst39lf/vf010, d6h for sst39lf/vf020, and d7h for sst39lf/vf040. address a 14-0 t ida dq 7-0 we# sw0 sw1 sw2 5555 2aaa 5555 0000 0001 oe# ce# three-byte sequence for software id entry t wp t wph t aa bf device id 55 aa 90
14 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 12: s oftware id e xit and r eset 395 ill f10.0 address a 14-0 dq 7-0 t ida t wp t whp we# sw0 sw1 sw2 5555 2aaa 5555 three-byte sequence for software id exit and reset oe# ce# aa 55 f0
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 15 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 13: ac i nput /o utput r eference w aveforms figure 14: a t est l oad e xample 395 ill f12.1 reference points output input v it v iht v ilt v ot ac test inputs are driven at v iht (0.9 v dd ) for a logic ? 1 ? and v ilt (0.1 v dd ) for a logic ? 0 ? . measurement reference points for inputs and outputs are v it (0.5 v dd ) and v ot (0.5 v dd ). input rise and fall times (10% ? 90%) are <5 ns. note: v it - v input te s t v ot - v output te s t v iht - v input high test v ilt - v input low test 395 ill f11.1 to tester to dut c l
16 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 15: b yte -p rogram a lgorithm 395 ill f13.1 start load data: aah address: 5555h load data: 55h address: 2aaah load data: a0h address: 5555h load byte address/byte data wait for end of program (t bp , data# polling bit, or toggle bit operation) program completed
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 17 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 16: w ait o ptions 395 ill f14.0 wait t bp , t sce, or t se byte-program/ erase initiated internal timer toggle bit ye s ye s no no program/erase completed does dq 6 match? read same byte data# polling program/erase completed program/erase completed read byte is dq 7 = true data? read dq 7 byte-program/ erase initiated byte-program/ erase initiated
18 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 17: s oftware id c ommand f lowcharts 395 ill f15.2 load data: aah address: 5555h software id entry command sequence load data: 55h address: 2aaah load data: 90h address: 5555h wait t ida read software id load data: aah address: 5555h software id exit & reset command sequence load data: 55h address: 2aaah load data: f0h address: 5555h load data: f0h address: xxh return to normal operation wait t ida wait t ida return to normal operation
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 19 2001 silicon storage technology, inc. s71150-03-000 6/01 395 figure 18: e rase c ommand s equence 395 ill f16.1 load data: aah address: 5555h chip-erase command sequence load data: 55h address: 2aaah load data: 80h address: 5555h load data: 55h address: 2aaah load data: 10h address: 5555h load data: aah address: 5555h wait t sce chip erased to ffh load data: aah address: 5555h sector-erase command sequence load data: 55h address: 2aaah load data: 80h address: 5555h load data: 55h address: 2aaah load data: 30h address: sa x load data: aah address: 5555h wait t se sector erased to ffh
20 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 product ordering information device speed suffix1 suffix2 sst39x fxxx -xx -x x -x x package modifier h = 32 leads k = 48 balls numeric = die modifier package type n = plcc w = tsop (die up) (8mm x 14mm) b3 = tfbga (6mm x 8mm) temperature range c = commercial = 0 c to +70 c i = industrial = -40 c to +85 c minimum endurance 4 = 10,000 cycles read access speed 45 = 45 ns 55 = 55 ns 70 = 70 ns 90 = 90 ns device density 512 = 512 kilobit 010 = 1 megabit 020 = 2 megabit 040 = 4 megabit voltag e l = 3.0-3.6v v = 2.7-3.6v
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 21 2001 silicon storage technology, inc. s71150-03-000 6/01 395 valid combinations for sst39lf512 sst39lf512-45-4c-nh sst39lf512-45-4c-wh valid combinations for sst39vf512 sst39vf512-70-4c-nh sst39vf512-70-4c-wh sst39vf512-90-4c-nh sst39vf512-90-4c-wh sst39vf512-90-4c-u4 sst39vf512-70-4i-nh sst39vf512-70-4i-wh sst39vf512-90-4i-nh sst39vf512-90-4i-wh valid combinations for sst39lf010 sst39lf010-45-4c-nh sst39lf010-45-4c-wh sst39lf010-45-4c-b3k valid combinations for sst39vf010 sst39vf010-70-4c-nh sst39vf010-70-4c-wh sst39vf010-70-4c-b3k sst39vf010-90-4c-nh sst39vf010-90-4c-wh sst39vf010-90-4c-b3k sst39vf010-90-4c-u4 sst39vf010-70-4i-nh sst39vf010-70-4i-wh sst39vf010-70-4i-b3k sst39vf010-90-4i-nh sst39vf010-90-4i-wh sst39vf010-90-4i-b3k valid combinations for sst39lf020 sst39lf020-45-4c-nh sst39lf020-45-4c-wh sst39lf020-55-4c-nh sst39lf020-55-4c-wh valid combinations for sst39vf020 sst39vf020-70-4c-nh sst39vf020-70-4c-wh sst39vf020-90-4c-nh sst39vf020-90-4c-wh sst39vf020-90-4c-u4 sst39vf020-70-4i-nh sst39vf020-70-4i-wh sst39vf020-90-4i-nh sst39vf020-90-4i-wh valid combinations for sst39lf040 sst39lf040-45-4c-nh sst39lf040-45-4c-wh sst39lf040-55-4c-nh sst39lf040-55-4c-wh valid combinations for sst39vf040 sst39vf040-70-4c-nh sst39vf040-70-4c-wh sst39vf040-90-4c-nh sst39vf040-90-4c-wh sst39vf040-90-4c-u1 sst39vf040-70-4i-nh sst39vf040-70-4i-wh sst39vf040-90-4i-nh sst39vf040-90-4i-wh note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combinations.
22 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 2001 silicon storage technology, inc. s71150-03-000 6/01 395 packaging diagrams 32- lead p lastic l ead c hip c arrier (plcc) sst p ackage c ode : nh 32- lead t hin s mall o utline p ackage (tsop) 8 mm x 14 mm sst p ackage c ode : wh .030 .040 .013 .021 .490 .530 .075 .095 .015 min. .125 .140 top view side view bottom view 1 232 .026 .032 .400 bsc 32.plcc.nh-ill.2 note: 1. complies with jedec publication 95 ms-016 ae dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in inches (min/max). 3. dimensions do not include mold flash. maximum allowable mold flash is .008 inches. 4. coplanarity: 4 mils. .050 bsc. .050 bsc. .026 .032 .023 .029 .447 .453 .042 .048 .042 .048 optional pin #1 identifier .547 .553 .585 .595 .485 .495 .020 r. max. .106 .112 r. x 30? 32.tsop-wh-ill.4 note: 1. complies with jedec publication 95 mo-142 ba dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in millimeters (min/max). 3. coplanarity: 0.1 (.05) mm. 4. maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads. 8.10 7.90 .270 .170 1.05 0.95 .50 bsc 0.15 0.05 12.50 12.30 pin # 1 identifier 14.20 13.80 0.70 0.50
data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 23 ?2001 silicon storage technology, inc. s71150-03-000 6/01 395 48- ball t hin - profile , f ine - pitch b all g rid a rray (tfbga) 6 mm x 8 mm sst p ackage c ode : b3k a1 corner h g f e d c b a a b c d e f g h bottom view top view side view 6 5 4 3 2 1 6 5 4 3 2 1 seating plane 0.35 0.05 1.10 0.10 0.15 6.00 0.20 0.45 0.05 (48x) a1 corner 8.00 0.20 0.80 4.00 0.80 5.60 48ba-tfbga-b3k-6x8-450mic-ill.0 note: 1. although many dimensions are similar to those of jedec publication 95, mo-210, this specific package is not registered. 2. all linear dimensions are in millimeters (min/max). 3. coplanarity: 0.1 (.05) mm. 4. the actual shape of the corners may be slightly different than as portrayed in the drawing. 1mm
24 data sheet 512 kbit / 1 mbit / 2 mbit / 4 mbit multi-purpose flash sst39lf512 / sst39lf010 / sst39lf020 / sst39lf040 sst39vf512 / sst39vf010 / sst39vf020 / sst39vf040 ?2001 silicon storage technology, inc. s71150-03-000 6/01 395 silicon storage technology, inc. 1171 sonora court sunnyvale, ca 94086 telephone 408-735-9110 fax 408-735-9036 www.superflash.com or www.ssti.com

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